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Effect of Air Atmosphere Sensitization on Formation of PbSe p-n Junctions for High-Performance Photodetectors
Yan, Shunya1,2; Yang, Qi1; Feng, Shuanglong1; Shen, Jun1; Yang, Jun1; Tang, Linlong1; Leng, Chongqian1; Zhou, Dahua1
2020-05-27
摘要Photodetectors based on polycrystalline lead salts are widely used to detect light in the mid-infrared range because they can be used at room temperature. In their fabrication, the sensitization process is considered to be the most critical factor. In this work, the crystalline structure of PbSe films deposited by electron-beam evaporation was analyzed by scanning electron microscopy, x-ray diffraction, and x-ray photoemission spectroscopy. The results showed that lead oxides were formed during the annealing process. We also investigated the electrical properties of the samples by Hall-effect measurements. In photodetection experiments at room temperature, the PbSe-based photodetectors showed responsivity and detectivity of 0.16 A/W and 6.66 x 10(8) cm Hz(1/2)/W, respectively. Remarkably, we measured a photocurrent even without applying a bias voltage, which implies that the p-n junctions separate the carriers in these films, thus also proving the existence of micro p-n junctions in the film. A carrier separation model is proposed to describe the conduction process.
关键词PbSe infrared detector sensitized mechanism p-n junction
DOI10.1007/s11664-020-08215-6
发表期刊JOURNAL OF ELECTRONIC MATERIALS
ISSN0361-5235
页码7
通讯作者Zhou, Dahua(zhoudahua@cigit.ac.cn)
收录类别SCI
WOS记录号WOS:000536051900003
语种英语