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	Physical model construction for electrical anisotropy of single crystal zinc oxide micro/nanobelt using finite element method
	Yu, Guangbin1; Tang, Chaolong2; Song, Jinhui1,2,3; Lu, Wenqiang3
	2014-04-14
摘要	Based on conductivity characterization of single crystal zinc oxide (ZnO) micro/nanobelt (MB/NB), we further investigate the physical mechanism of nonlinear intrinsic resistance-length characteristic using finite element method. By taking the same parameters used in experiment, a model of nonlinear anisotropic resistance change with single crystal MB/NB has been deduced, which matched the experiment characterization well. The nonlinear resistance-length comes from the different electron moving speed in various crystal planes. As the direct outcome, crystallography of the anisotropic semiconducting MB/NB has been identified, which could serve as a simple but effective method to identify crystal growth direction of single crystal semiconducting or conductive nanomaterial. (C) 2014 AIP Publishing LLC.
DOI	10.1063/1.4871703
发表期刊	APPLIED PHYSICS LETTERS
ISSN	0003-6951
卷号	104期号:15页码:4
通讯作者	Song, JH (reprint author), Harbin Univ Sci & Technol, Higher Educ Key Lab Measuring & Control Technol &, Harbin 150080, Peoples R China.
收录类别	SCI
WOS记录号	WOS:000335145200057
语种	英语