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Ultrasensitive and fast photoresponse in graphene/silicon-on-insulator hybrid structure by manipulating the photogating effect
Jiang, Hao1,2; Nie, Changbin2; Fu, Jintao2; Tang, Linlong2; Shen, Jun2; Sun, Feiying2; Sun, Jiuxun1; Zhu, Meng3; Feng, Shuanglong2; Liu, Yang4
2020-09-01
摘要The hybrid structures of graphene with semiconductor materials based on photogating effect have attracted extensive interest in recent years due to the ultrahigh responsivity. However, the responsivity (or gain) was increased at the expense of response time. In this paper, we devise a mechanism which can obtain an enhanced responsivity and fast response time simultaneously by manipulating the photogating effect (MPE). This concept is demonstrated by using a graphene/silicon-on-insulator (GSOI) hybrid structure. An ultrahigh responsivity of more than 10(7) A/W and a fast response time of 90 Its were obtained. The specific detectivity D* was measured to be 1.46 X 10(13) Jones at a wavelength of 532 nm. The Silvaco TCAD modeling was carried out to explain the manipulation effect, which was further verified by the GSOI devices with different doping levels of graphene in the experiment. The proposed mechanism provides excellent guidance for modulating carrier distribution and transport, representing a new route to improve the performance of graphene/semiconductor hybrid photodetectors.
关键词graphene manipulation photodetector photogating effect silicon-on-insulator
DOI10.1515/nanoph-2020-0261
发表期刊NANOPHOTONICS
ISSN2192-8606
卷号9期号:11页码:3663-3672
通讯作者Sun, Jiuxun(sjx@uestc.edu.cn) ; Shi, Haofei(shi@cigit.ac.cn) ; Wei, Xingzhan(weixingzhan@cigit.ac.cn)
收录类别SCI
WOS记录号WOS:000561278000016
语种英语