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Effects of doping graphene on the performance of graphene–silicon hybrid photoconductive detectors
Fu,JinTao1,2; Que,Longcheng3; Jiang,Hao1,4; Luo,Wei1; Nie,Changbin1; Leng,Chongqian1; Luo,Ying3; Zhou,Yun3; Lv,Jian3; Zhou,Dahua1
2020-09-14
摘要AbstractThe photoconductive detector based on a graphene–silicon heterostructure retains excellent optoelectrical properties, in which the graphene plays an indispensable role, acting as the carrier transporting channel. Herein, we systematically investigate by simulation and experiment how doping graphene will affect the performance of graphene–silicon hybrid photoconductors. Compared with lightly p-doped graphene devices, the responsivity can be made nine times better through increasing the p-type doping level. In addition, the net photocurrent can also be enhanced by about four times through increasing the n-type doping level of graphene. We attribute this improvement to the barrier height change adjusted by doping graphene, which can optimize the lifetime and transport of photocarriers. Such a graphene–doping method, that manipulates the junction region, could offer useful guidance for achieving high-performance graphene photodetectors.
关键词graphene film photoconductive detector doping effects
DOI10.1088/1361-6528/abb108
发表期刊Nanotechnology
ISSN0957-4484
卷号31期号:48
通讯作者Luo,Ying() ; Zhou,Dahua()
WOS记录号IOP:0957-4484-31-48-abb108
语种英语