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Band convergence and thermoelectric performance enhancement of InSb via Bi doping
Zhang, Xiong1; Lu, Wei1; Zhang, Yu1; Gu, Haoshuang4; Zhou, Zizhen5; Han, Guang6; Zhang, Bin2; Wang, Guoyu3; Zhou, Xiaoyuan2,5
2021-12-01
摘要The thermoelectric performance of InSb has been significantly improved via defect engineering or nanostructuring to reduce thermal conductivity in the past decade; however, less attention has been paid to improve its electrical properties via other key factors, e.g., carrier scattering mechanism, bipolar effect, etc. Here, we show that Bi doping on the Sb site not only significantly suppresses the high-temperature bipolar effect, but also leads to band convergence which enhances the Seebeck coefficient. As a result, a maximum zT of similar to 0.43 @ 675 K is achieved in InSb0.97B0.03, which is increased by similar to 43% as compared to that of pure InSb. In addition, the comparison of Bi and Ga doping (J. Mater. Chem., 2011, 21, 12398-12401) on the low-temperature electrical transport properties reveals that Bi doping is more beneficial for achieving high power factor due to the mixed acoustic phonon and ionized impurity scattering. Finally, it is suggested that Bi should be an effective dopant for electrical optimization of InSb and a further experiment on co-doping of Ga and Bi will be a considerable alternative for thermoelectric performance enhancement of InSb-based materials.
关键词Thermoelectric InSb Electrical properties optimization Bipolar effect Power factor enhancement
DOI10.1016/j.intermet.2021.107347
发表期刊INTERMETALLICS
ISSN0966-9795
卷号139页码:8
通讯作者Zhang, Bin(xinyun2017@cqu.edu.cn) ; Wang, Guoyu(guoyuw@cigit.ac.cn)
收录类别SCI
WOS记录号WOS:000706176400001
语种英语