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Single-crystal two-dimensional material epitaxy on tailored non-single-crystal substrates
Li, Xin1,2; Wu, Guilin3,4; Zhang, Leining5,6; Huang, Deping1; Li, Yunqing1,2; Zhang, Ruiqi1,2; Li, Meng7; Zhu, Lin7; Guo, Jing3; Huang, Tianlin3
2022-04-01
摘要The use of single-crystal substrates as templates for the epitaxial growth of single-crystal overlayers has been a primary principle of materials epitaxy for more than 70 years. Here we report our finding that, though counterintuitive, single-crystal 2D materials can be epitaxially grown on twinned crystals. By establishing a geometric principle to describe 2D materials alignment on high-index surfaces, we show that 2D material islands grown on the two sides of a twin boundary can be well aligned. To validate this prediction, wafer-scale Cu foils with abundant twin boundaries were synthesized, and on the surfaces of these polycrystalline Cu foils, we have successfully grown wafer-scale single-crystal graphene and hexagonal boron nitride films. In addition, to greatly increasing the availability of large area high-quality 2D single crystals, our discovery also extends the fundamental understanding of materials epitaxy. The heteroepitaxial growth of crystalline 2D materials is usually based on single-crystal substrates. Here, the authors demonstrate that single-crystal graphene and hexagonal boron nitride films can be successfully grown on wafer-scale copper foils with tailored twin boundaries.
DOI10.1038/s41467-022-29451-w
发表期刊NATURE COMMUNICATIONS
卷号13期号:1页码:8
通讯作者Huang, Xiaoxu(xiaoxuhuang@cqu.edu.cn) ; Ding, Feng(f.ding@unist.ac.kr) ; Shi, Haofei(shi@cigit.ac.cn)
收录类别SCI
WOS记录号WOS:000777408600013
语种英语