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Uncooled Broadband Photodetection via Light Trapping in Conformal PtTe2-Silicon Nanopillar Heterostructures
Wu, Yuequan1,3; Nie, Changbin2,4; Sun, Feiying2; Jiang, Xilong1,3; Zhang, Xianning1,3; Fu, Jintao2,4; Peng, Yang1,3; Wei, Xingzhan2,3,4
2024-04-20
摘要Dirac semimetals have demonstrated significant attraction in the field of optoelectronics due to their unique bandgap structure and high carrier mobility. Combining them with classical semiconductor materials to form heterojunctions enables broadband optoelectronic conversion at room temperature. However, the low light absorption of layered Dirac semimetals substantially limits the device's responsivity in the infrared band. Herein, a three-dimensional (3D) heterostructure, composed of silicon nanopillars (SiNPs) and a conformal PtTe2 film, is proposed and demonstrated to enhance the photoresponsivity for uncooled broadband detection. The light trapping effect in the 3D heterostructure efficiently promotes the interaction between light and PtTe2, while also enhancing the light absorption efficiency of silicon, which enables the enhancement of the device responsivity across a broadband spectrum. Experimentally, the PtTe2-SiNPs heterojunction device demonstrates excellent photoelectric conversion behavior across the visible, near-infrared, and long-wave infrared (LWIR) bands, with its responsivity demonstrating an order-of-magnitude improvement compared to the counterparts with planar silicon heterojunctions. Under 11 mu m laser irradiation, the noise equivalent power (NEP) can reach 1.76 nWHz(-1/2) (@1 kHz). These findings offer a strategic approach to the design and fabrication of high-performance broadband photodetectors based on Dirac semimetals.
关键词Dirac semimetal PtTe2 siliconnanopillars light trapping broadband photodetection photodetector
DOI10.1021/acsami.4c00827
发表期刊ACS APPLIED MATERIALS & INTERFACES
ISSN1944-8244
卷号16期号:17页码:22632-22640
通讯作者Wei, Xingzhan(weixingzhan@cigit.ac.cn)
收录类别SCI
WOS记录号WOS:001242275300001
语种英语