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Ultrahigh Bipolar Photoresponse in a Self-Powered Ultraviolet Photodetector Based on GaN and In/Sn-Doped Ga2O3 Nanowires pn junction
Xu, Wei1,2,3; Li, Bei1; Wu, Yutong1; Dong, Zhiyu1; Zhang, Kun1; Wang, Qingshan4; Feng, Shuanglong1,2; Lu, Wenqiang1,2
2024-06-27
摘要Self-powered ultraviolet photodetectors with bipolar photoresponse have great potential in the fields of ultraviolet optical communication, all-optical controlled artificial synapses, high-resolution ultraviolet imaging equipment, and multiband photoelectric detection. However, the current low optoelectronic performance limits the development of such polar switching devices. Here, we construct a self-powered ultraviolet photodetector based on GaN and In/Sn-doped Ga2O3 (IGTO) nanowires (NWs) pn junction structure. This unique nanowire/thin film structure allows GaN and IGTO to dominate the absorption of light at different wavelengths, resulting in a highly bipolar photoresponse. The device has a responsivity of 2.04 A/W and a normalized detectivity of 7.18 x 10(13) Jones at 254 nm and a responsivity of -2.09 A/W and a normalized detectivity of -7 x 10(13) Jones at 365 nm, both at zero bias. In addition, it has an extremely high I light/I dark ratio of 1.05 x 10(5) and ultrafast response times of 2.4/1.9 ms (at 254 nm) and 5.7/5.2 ms (at 365 nm). These excellent properties are attributed to the high specific surface area of the one-dimensional nanowire structure and the abundant voids generated by the nanowire network to enhance the absorption of light, and the p-n junction structure enables the rapid separation and transfer of photogenerated electron-hole pairs. Our findings provide a feasible strategy for high-performance wavelength-controlled polarity switching devices.
关键词bipolar photoresponse self-powered ultravioletphotodetector In/Sn-doped Ga2O3 nanowire pn junction
DOI10.1021/acsami.4c04812
发表期刊ACS APPLIED MATERIALS & INTERFACES
ISSN1944-8244
页码12
通讯作者Lu, Wenqiang(wqlu@cigit.ac.cn)
收录类别SCI
WOS记录号WOS:001258166900001
语种英语