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High Performance Ga4SnO8 Nanorod and GaN Heterojunction Self-Powered Photodetector by Hydrothermal Method
Dong, Zhiyu1,2; Li, Bei3; Xu, Wei2; Zhang, Kun2; Zhou, Yulong1,2; Fu, Xie2; Wu, Yutong2; Feng, Shuanglong2; Douadji, Lyes2; Guellati, Ouanassa4,5
2024-09-17
摘要Solar-blind ultraviolet photodetectors have received significant attention due to their extensive applications in both military and civilian fields. There is a need to develop self-powered photodetectors that exhibit high performance, characterized by attributes such as rapid response speed and enhanced responsivity, among others. In this work, a thin film of Ga4SnO8 nanorods was synthesized on a GaN substrate using low-cost hydrothermal method. The device showed excellent performance at 0 V bias voltage, with a maximum responsivity of 1.82 A/W, a detection rate of 6.45 x 10(13) Jones, an external quantum efficiency of 8.23 x 10(2)% at a wavelength of 275 nm UV light, a fast response time of 7 ms, and a decay time of 18 ms, respectively. The electron transport mechanism in the GaN/Ga4SnO8 heterojunction was analyzed through an analysis of the band diagram. Overall, this heterojunction photodetector has demonstrated significant potential for solar blind ultraviolet light detection. Its combination of self-powering capabilities, high performance, and rapid response makes it a promising candidate for applications requiring sensitive and reliable UV detection without interference from sunlight.
关键词Ga4SnO8/GaN heterojunction self-poweredphotodetector hydrothermal method solar-blindultraviolet photodetector high performance photodetector
DOI10.1021/acsanm.4c02946
发表期刊ACS APPLIED NANO MATERIALS
卷号7期号:18页码:21379-21387
通讯作者Lu, Wenqiang(wqlu@cigit.ac.cn)
收录类别SCI
WOS记录号WOS:001315147700001
语种英语