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Thermoelectric Properties of Ce/Pb Co-doped Polycrystalline In4-x Ce (x) Pb0.01Se3 Compounds
Zhan, Heng1; Peng, Kunling1,2; Alsharafi, Rashed1; Chen, Qiufan1; Yao, Wei1; Lu, Xu1; Wang, Guoyu2; Sun, Xiaonan1; Zhou, Xiaoyuan1
2017-05-01
摘要In this study, the thermoelectric properties for polycrystalline In4-x Ce (x) Pb0.01Se3 (x = 0.03, 0.06, 0.08, 0.1) compounds are investigated. Theoretical and experimental study reveal that the Ce/Pb co-doping at the In sites is an effective way to simultaneously decrease the thermal conductivity and increase the electric conductivity (Ahn et al. in Appl Phys Lett 99:102, 2011). As a heavy atom, Ce can effectively scatter phonons which reduces the thermal conductivity. Meanwhile, the Pb atom serving as electron donor provides additional electrons in the doped compounds. Therefore, the reduced thermal conductivity along with the boosted power factor give rise to an improvement of the dimensionless figure-of-merit, ZT, of over 65% in In4-x Ce (x) Pb0.01Se3 (x = 0.06) compounds as compared with pure In4Se3.
关键词Heavy atom In4Se3 low thermal conductivity electron donor
DOI10.1007/s11664-016-4920-8
发表期刊JOURNAL OF ELECTRONIC MATERIALS
ISSN0361-5235
卷号46期号:5页码:3215-3220
通讯作者Sun, XN ; Zhou, XY (reprint author), Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China.
收录类别SCI
WOS记录号WOS:000398937900094
语种英语