中国科学院重庆绿色智能技术研究院机构知识库

The lithography etching process was developed to make the continuous surface micro-lens structure on a self-supporting polyimide (PI) thin film. The photo-resist sculpture structures were obtained by means of moving mask exposure technology firstly, and then they were transferred onto a PI thin film with high-fidelity. While the key point of our process is how to achieve equal ratio etching. The affection of optimization of etching gas composition, ratio and flow to the equal ratio etching was studied respectively. Under the condition of some process parameters are fixed (such as the RF power, chamber pressure and self-bias), when the content of O2was a constant in the mixing work gas of O2+SF6, with the percentage of SF6increasing to 13.04%, and the total flow was the optimal value of 46sccm, which makes the etching rate is 136 nm/min and the etching ratio is 1:1.02. The anisotropic etching with the 2.3% etching error was obtained finally. It has proved that the micro-lens array fabricated on a PI thin film has the same optical performance comparing to a micro-lens array on a quartz substrate, by using the focal spot testing setup in our lab. ©, 2015, Chinese Optical Society. All right reserved.

为实现在聚酰亚胺薄膜上制备连续面形的微透镜结构,开发了一种薄膜光刻刻蚀的工艺方法.首先利用移动掩模曝光得到连续面形的光刻胶微浮雕结构,再通过反应离子刻蚀技术将微结构高保真度、低粗糙度地转移到PI薄膜上.为解决刻蚀过程中最关键的等比刻蚀问题,分别研究了刻蚀气体组分的优选、气体组分配比和气体流量的优化等对等比刻蚀的影响.实验结果表明:在一定的刻蚀条件(如射频功率、腔室压强和自偏压)下,O_2+SF_6的混合工作气体中, O_2为一定值,随着SF_6占的比例增加至13.04%,总流量为46sccm的优化值时,实现了刻蚀速率和刻蚀比分别为136 nm/min和1∶1.02,刻蚀误差仅为2.3%的较好各向异性刻蚀.通过实验室搭建的焦距测试系统,证明了该方法在PI薄膜上制备的微透镜阵列与石英上具有相同的光学特性.