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	Se Vacancy Effect on the Thermoelectric Performance of Pb-Doped In4Pb0.01Se3−x Polycrystalline
	Alsharafi, Rashed1; Zhan, Heng1; Shaheen, Nusrat1; Lu, Xu1; Wang, Guoyu2; Sun, Xiaonan1; Zhou, Xiaoyuan1
	2017
摘要	Indium selenides have been considered as highly efficient thermoelectric materials due to their excellent electrical and thermal properties. Herein, we report the effect of Se vacancy on the thermoelectric performance of Pb-doped In4Pb0.01Se3−x polycrystalline (x = 0, 0.03, 0.07, and 0.1) synthesized by solid state reaction followed by spark plasma sintering. The obtained products are characterized by x-ray powder diffraction, scanning electron microscopy, and transmission electron microscopy. Owing to the increase of Se vacancy in Pb-doped compounds, the electrical resistivity is reduced by increasing carrier concentration along with the reduction of the lattice thermal conductivity. Ultimately, the In4Pb0.01Se3−x (x = 0.07) exhibits a high ZT value of 0.95 at 690 K. © 2017, The Minerals, Metals & Materials Society.
DOI	10.1007/s11664-016-5218-6
发表期刊	Journal of Electronic Materials
ISSN	03615235
卷号	46期号:5页码:3131-3136
收录类别	EI
语种	英语
EISSN	1543186X