中国科学院重庆绿色智能技术研究院机构知识库

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已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择WOS被引频次升序WOS被引频次降序题名升序题名降序期刊影响因子升序期刊影响因子降序作者升序作者降序发表日期升序发表日期降序提交时间升序提交时间降序
	Engineering of Vacancy Defects in WS2 Monolayer by Rare-Earth (Er, Tm, Lu) Doping: A First-Principles Study 期刊论文 PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2023, 页码: 10 作者:  Zhao, Yang;  Yan, Bing;  Liang, Xianxiao;  Liu, Shaoxiang;  Shi, Xuan;  Zhao, Hongquan 收藏  |  浏览/下载：55/0  |  提交时间：2023/12/25 bandgap structure  optical properties  rare earth doping  vacancy defects  WS2
	Preparation and photoelectric characterization of p-GeSe/p-WS2 heterojunction devices 期刊论文 JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2022, 卷号: 55, 期号: 32, 页码: 9 作者:  Yan, Bing;  Zhang, Guoxin;  Ning, Bo;  Chen, Sikai;  Zhao, Yang;  Zhou, Dahua;  Shi, Xuan;  Shen, Jun;  Xiao, Zeyun;  Zhao, Hongquan 收藏  |  浏览/下载：87/0  |  提交时间：2022/08/22 van der Waals heterojunction  p-p type junction  GeSe/WS2  optoelectronic properties
	Ultra-Thin GeSe/WS2 Vertical Heterojunction with Excellent Optoelectronic Performances 期刊论文 ADVANCED OPTICAL MATERIALS, 2022, 页码: 7 作者:  Yan, Bing;  Ning, Bo;  Zhang, Guoxin;  Zhou, Dahua;  Shi, Xuan;  Wang, Chunxiang;  Zhao, Hongquan 收藏  |  浏览/下载：87/0  |  提交时间：2022/08/22 2D materials  GeSe  WS  (2)  heterojunctions  optoelectronic properties  photodetectors